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| SMBTA 42M NPN Silicon High-Voltage Transistor * High breakdown voltage * Low collector-emitter saturation voltage * Complementary type: SMBTA 92M (PNP) 4 5 3 2 1 VPW05980 Type SMBTA 42M Marking Ordering Code Pin Configuration s1D Q62702-A1243 Package 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Base current Total power dissipation, T S 83 C Junction temperature Storage temperature Symbol Value 300 300 6 500 100 1.5 150 - 65...+150 W C mA Unit V VCEO VCBO VEBO IC IB Ptot Tj T stg Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS 100 45 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Jun-18-1997 1998-11-01 SMBTA 42M Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter Unit max. 100 20 100 nA A nA V min. DC characteristics Collector-emitter breakdown voltage typ. - V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I EBO hFE 300 300 6 - I C = 100 A, IB = 0 Collector-base breakdown voltage I C = 10 A, IB = 0 Emitter-base breakdown voltage I E = 10 A, I C = 0 Collector cutoff current VCB = 200 V, I E = 0 Collector-base cutoff current VCB = 200 V, T A = 150 C Emitter cutoff current VEB = 3 V, I C = 0 DC current gain 1) I C = 1 mA, V CE = 10 V I C = 10 mA, VCE = 10 V I C = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) 25 40 40 - 0.5 0.9 V VCEsat VBEsat - I C = 20 mA, I B = 2 mA Base-emitter saturation voltage 1) I C = 20 mA, I B = 2 mA AC Characteristics Transition frequency fT Ccb 50 - - 3 MHz pF IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 20 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% Semiconductor Group Semiconductor Group 22 Jun-18-1997 1998-11-01 SMBTA 42M Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy DC current gain hFE = f (I C) VCE = 10V 10 3 5 SMBTA 42/43 EHP00844 1800 mW 1400 1200 1000 800 600 400 200 0 0 h FE TS P tot 10 2 5 TA 10 1 5 20 40 60 80 100 120 s 150 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 3 tp C Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 2 10 3 RthJS 10 1 Ptotmax / PtotDC K/W - 10 2 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -5 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Semiconductor Group Semiconductor Group 33 Jun-18-1997 1998-11-01 SMBTA 42M Collector cutoff current I CBO = f (T A) Collector current I C = f (VBE) VCB = 160V SMBTA 42/43 EHP00842 VCE = 10 V 10 3 mA max SMBTA 42/43 EHP00843 10 4 nA 10 3 5 10 5 2 C 10 2 5 CBO 10 1 typ 10 1 5 10 0 5 10 -1 0 50 100 5 10 0 5 10 -1 C 150 0 0.5 1.0 V 1.5 TA V BE Semiconductor Group Semiconductor Group 44 Jun-18-1997 1998-11-01 |
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